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  dmg6898lsd document number: ds31947 rev. 6 - 2 1 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product dual n - channel enhancement mode mosfet product summary v (br)dss r ds( on ) max i d max t a = + 25c 3 0v 16m ? @ v gs = 10 v 9.8a 23m ? @ v gs = 4 .5v 8.7a description this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? backlighting ? power management functions ? dc - dc converters features ? low on - resistance ? low input capacitance ? fast switching spe ed ? low input/output leakage ? esd protected up to 2 k v ? totally lead - free & fully rohs compliant (notes 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 s tandards for high reliability ? ppap capable (note 4) mechanical data ? case: so - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? weight: 0.072 grams ( a pproximate) order ing information (note s 4 & 5 ) part number qualification case packaging dmg 6898 lsd - 13 commercial so - 8 2 , 500 / tape & reel dmg 6898 lsd q - 13 automotive so - 8 2 , 500 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65 /eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q10 1 qualified and are ppap capable. automotive, aec - q10 1 and standard products are electrically a nd thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/ . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking in formation t op view t op view internal schematic 1 4 8 5 g6898ld yy ww = manufacturers marking d1 g2 g1 d2 s1 s2 d1 d2 esd protected to 2kv
dmg6898lsd document number: ds31947 rev. 6 - 2 2 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product maximum ratings @t a = + 25c unless otherwise specified characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) steady state t a = + 25c t a = + 85 c i d 9.5 7.1 a pulsed drain current (note 7 ) i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 6 ) p d 1.28 w thermal resistance, junction to ambient @t a = + 25c (note 6 ) r ja j , t stg - 55 to +150 c electrical characteristics @t a = + 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 2 0 - - v v gs = 0v, i d = 250a j = + 25c i dss - - 1.0 a ds = 20 v, v gs = 0v gate - source leakage i gss - - 1 0 gs = 12 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 0. 5 1.0 1.5 v v ds = v gs , i d = 250 a ds (on) - 1 1 1 7 16 2 3 m gs = 4.5 v, i d = 9 .4 a v gs = 2 .5 v, i d = 8.3 a forward transfer admittance |y fs | - 17 - s v ds = 5 v, i d = 9 .4 a diode forward voltage v sd - 0.7 1.2 v v gs = 0v, i s = 1 .3 a dynamic characteristics (note 9 ) input capacitance c iss - 1149 - pf v ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 157 - pf reverse transfer capacitance c rss - 142 - pf gate resistance r g - 1.51 - ds = 0 v, v gs = 0v , f = 1mhz total gate charge (v gs = 4.5v) q g - 11.6 - nc v gs = 4. 5 v, v ds = 10 v, i d = 9.4 a total gate charge (v gs = 10v) q g - 26 - nc gate - source charge q gs - 2.7 - nc gate - drain charge q gd - 3.4 - nc turn - on delay time t d(on) - 11.67 - ns v dd = 1 0 v, v g s = 4.5 v, r g en = 6 d = 1a turn - on rise time t r - 12.49 - ns turn - off delay time t d(off) - 35.89 - ns turn - off fall time t f - 12.33 - ns notes: 6 . device mounted on fr - 4 pcb, with minimum recommended pad layout. 7 . repetitive rating, pulse width limited by junction temperature. 8 . short durati on pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing.
dmg6898lsd document number: ds31947 rev. 6 - 2 3 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product 0 5 10 15 20 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds v = 2.0v gs v = 1.8v gs v = 1.5v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristic v , gate-source voltage (v) gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 12 14 16 18 20 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 2.5v gs v = 1.8v gs 0 0.01 0.02 0.03 0.04 0 2 4 6 8 10 12 14 16 18 20 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = 4.5v i = 500ma gs d v = 2.5v i = 150ma gs d 0 0.01 0.02 0.03 0.04 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v = 2.5v i = 150ma gs d v = 4.5v i = 500ma gs d
dmg6898lsd document number: ds31947 rev. 6 - 2 4 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 5 10 15 20 0.4 0.6 0.8 1 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 0 5 10 15 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss 0 2 4 6 8 10 12 14 16 18 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , l e a k a g e c u r r e n t ( n a ) d s s 10,000 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 4 8 12 16 20 24 28 v = 10v i = 9.4a ds d q , otal gate charge (nc) fig. 11 gate-source voltage vs. total gate charge g t v , a t e - s o u r c e v o l t a g e ( v ) g s g
dmg6898lsd document number: ds31947 rev. 6 - 2 5 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product package outline dimensions please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sugg ested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? ? ? dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 205c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y
dmg6898lsd document number: ds31947 rev. 6 - 2 6 of 6 www.diodes.com november 2014 ? diodes incorporated dmg6898lsd new product important notice diodes incorporated makes no warranty of any kind , express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its su bsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the appl ication or use of this document or any product described herein; neither does diodes incorporated convey any license under it s patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incor porated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in engl ish but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized f or use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. ar e intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user . b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their pr oducts and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com


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